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RIR Power Electronics Shares Hit 5% Upper Circuit: Expands SiC Diode Production

Written by: Sachin GuptaUpdated on: Jun 6, 2025, 11:55 AM IST
RIR Power Electronics shares saw a positive market reaction after the company announced the successful production of 1200V Silicon Carbide (SiC) diodes.
RIR Power Electronics Shares Hit 5% Upper Circuit:  Expands SiC Diode Production
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On June 6, 2025, RIR Power Electronics shares hit a 5% upper circuit limit at ₹2,873.00 as of 11:40 AM after opening at ₹2,803.00 on BSE. The gain in RIR Power Electronics shares follows the announcement of the successful production and initial shipment of 1200V Silicon Carbide (SiC) diodes from Taiwan.

This milestone was achieved through a strategic manufacturing collaboration with Pro Asia Semiconductor Corporation (PASC), Taiwan, and by leveraging technology acquired from U.S.-based Sicamore Semi.

Versatile 1200V SiC Diode Portfolio Launched

The newly released product lineup includes 1200V Schottky Barrier Diodes (SBDs) with current ratings ranging from 2 amps to 60 amps. These diodes are designed to meet the most commonly demanded specifications across global industrial, commercial, and defence applications. With manufacturing in Taiwan, RIR Power is now better positioned to serve existing customers in India and the U.S., while expanding into emerging high-growth markets in Southeast Asia.

Also Read: Best Semiconductor Stocks in June 2025: Tata Elxsi, Dixon Tech & More Based on 5-Year CAGR

Technology Transfer and Global Manufacturing Integration

The production scale-up follows a landmark technology transfer agreement signed with Sicamore Semi on October 17, 2024. The agreement granted RIR Power exclusive rights to manufacture, commercialise, and market a range of SiC-based power devices—including diodes, MOSFETs, and IGBTs—using Sicamore’s field-proven IP and fabrication processes.

Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production with technical support from Vortex Semi (USA) and PASC. This transition enhances RIR Power’s scalability and competitiveness in the global semiconductor market.

The 1200V SiC diodes manufactured at PASC’s state-of-the-art fabrication facility have been shipped to India and validated to meet international quality and performance standards. RIR Power has already secured key orders from Richardson Electronics (USA) and Ankit Plastics (India), both of whom are critical suppliers in sectors such as industrial automation, power conversion, and defence electronics.

Supporting India's Semiconductor Vision

This production milestone directly supports the "Make in India" initiative by strengthening the country’s semiconductor supply chain and reducing reliance on imported technologies for critical sectors. Complementing this achievement, RIR Power’s upcoming ₹618 crore SiC fabrication facility in Odisha will further bolster India’s domestic manufacturing capabilities.

The facility is expected to create high-skilled jobs, stimulate regional economic growth, and position India as a competitive player in the global high-power semiconductor industry.

Disclaimer: This blog has been written exclusively for educational purposes. The securities mentioned are only examples and not recommendations. This does not constitute a personal recommendation/investment advice. It does not aim to influence any individual or entity to make investment decisions. Recipients should conduct their own research and assessments to form an independent opinion about investment decisions. 

Investments in the securities market are subject to market risks, read all the related documents carefully before investing.

Published on: Jun 6, 2025, 11:51 AM IST

Sachin Gupta

Sachin Gupta is a Content Writer with 6+ years of experience in the stock market, including global markets like the US, Canada, and Australia. At Angel One, Sachin specialises in creating financial content that simplifies complex market trends. Sachin holds a Master's in Commerce, specialising in Economics.

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